| Nitride Wide Bandgap Semiconductor Material and Electronic Devices Contributor(s): Hao, Yue (Author), Zhang, Jin Feng (Author), Zhang, Jin Cheng (Author) |
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ISBN: 1498745121 ISBN-13: 9781498745123 Publisher: CRC Press OUR PRICE: $228.00 Product Type: Hardcover - Other Formats Published: October 2016 |
| Additional Information |
| BISAC Categories: - Science | Physics - General - Technology & Engineering | Electronics - Microelectronics - Technology & Engineering | Microwaves |
| Dewey: 621.381 |
| LCCN: 2016018391 |
| Physical Information: 0.88" H x 7.01" W x 10" (1.98 lbs) 392 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits. |