| Mosfet Theory and Design Contributor(s): Warner, R. M. (Author), Grung, B. L. (Author) |
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ISBN: 0195116429 ISBN-13: 9780195116427 Publisher: Oxford University Press, USA OUR PRICE: $168.29 Product Type: Paperback Published: January 1999 Annotation: Developed for a one-semester course at the junior, senior, or graduate level, MOSFET Theory and Design presents a clear, in-depth treatment of physical analysis and design principles for the MOSFET. By focusing solely on the MOSFET, this slim volume recognizes the dominance of this device in today's microelectronics technology while also providing students with an efficient text free of extra subject matter. Carefully building from simple examples to more complex, real-life cases, the text begins with elementary theory for the MOS capacitor, adding and explaining the complicating factors step by step. It treats the interplay of MOS capacitor and PN junction in the MOSFET both physically and analytically, using some original tools. The book goes on to cover advanced models of the MOSFET, including SPICE treatments of small-signal and large-signal problems using Level 1, 2, and 3 first-generation models, and ending with a brief discussion of second- and third-generation models. MOSFET Theory and Design offers a "hands on" approach to learning, employing analytic, computer, and design problems. It incorporates additional pedagogical aids such as a book summary, review questions that emphasize essential points, in-text exercises with accompanying solutions, and a comprehensive bibliography. |
| Additional Information |
| BISAC Categories: - Technology & Engineering | Electronics - Semiconductors - Technology & Engineering | Electronics - Transistors - Technology & Engineering | Electrical |
| Dewey: 621.381 |
| LCCN: 98013184 |
| Physical Information: 0.57" H x 6.12" W x 9.2" (0.8 lbs) 272 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: Developed for a one-semester course at the junior, senior, or graduate level, MOSFET Theory and Design presents a clear, in-depth treatment of physical analysis and design principles for the MOSFET. By focusing solely on the MOSFET, this slim volume recognizes the dominance of this device in today's microelectronics technology while also providing students with an efficient text free of extra subject matter. Carefully building from simple examples to more complex, real-life cases, the text begins with elementary theory for the MOS capacitor, adding and explaining the complicating factors step by step. It treats the interplay of MOS capacitor and PN junction in the MOSFET both physically and analytically, using some original tools. The book goes on to cover advanced models of the MOSFET, including SPICE treatments of small-signal and large-signal problems using Level 1, 2, and 3 first-generation models, and ending with a brief discussion of second- and third-generation models. MOSFET Theory and Design offers a hands on approach to learning, employing analytic, computer, and design problems. It incorporates additional pedagogical aids such as a book summary, review questions that emphasize essential points, in-text exercises with accompanying solutions, and a comprehensive bibliography. |