| Radiation Defect Engineering Contributor(s): Vera, Abrosimova (Author), Kozlovski, Vitali V. (Author) |
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ISBN: 9812565213 ISBN-13: 9789812565211 Publisher: World Scientific Publishing Company OUR PRICE: $112.10 Product Type: Hardcover - Other Formats Published: November 2005 Annotation: The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed. |
| Additional Information |
| BISAC Categories: - Technology & Engineering | Materials Science - General - Technology & Engineering | Electronics - Semiconductors - Science | Radiation |
| Dewey: 621.381 |
| Series: Selected Topics in Electronics and Systems |
| Physical Information: 0.86" H x 6.76" W x 10.06" (1.59 lbs) 264 pages |