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This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.

Dr Albert G. Baca received his BS in chemistry and mathematics at the University of New Mexico and his PhD in chemistry at the University of California, Berkeley. Since joining Sandia National Laboratories in 1990, he has conducted research and published on a wide range of compound semiconductor devices and processes. Prior to joining Sandia National Laboratories he worked at ATandT Bell Laboratories on GaAs FET technology from 1985-1990.

Dr Carol I.H. Ashby received her BS in chemistry at the University of Idaho and her PhD in inorganic chemistry at the University of Illinois, Champaign-Urbana. Since joining Sandia National Laboratories, she has conducted research and published on many semiconductor materials topics including photochemical etching, plasma etching and deposition, passivation, and wet oxidation. She received R and D 100 Awards in 1993 and 2004.