| Elementary Dislocation Theory Revised Edition Contributor(s): Weertman, Johannes (Author), Weertman, Julia R. (Author) |
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ISBN: 0195069005 ISBN-13: 9780195069006 Publisher: Oxford University Press, USA OUR PRICE: $127.70 Product Type: Paperback Published: June 1992 Annotation: The topics of this text are fundamental to the theory of dislocation behavior. Today knowledge of this theory is essential of a materials scientist or engineer, a specialist in electronics materials or in fracture mechanics. At the time we entered to materials profession it was otherwise. Some senior metallurgists of high repute were quite antagonists to the idea of dislocations, did not believe they are of any importance, did not know much about them, and, unlike present-day workers, did not have the opportunity to see their existence verified by electron microscopes. The dislocation now is recognized as a key factor determining the behavior of crystalline solids. |
| Additional Information |
| BISAC Categories: - Science | Physics - Crystallography |
| Dewey: 548.842 |
| LCCN: 92009613 |
| Physical Information: 0.53" H x 5.56" W x 8.28" (0.60 lbs) 228 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: This classic text of elementary dislocation theory has been reprinted to fulfill persistent demand. Because it approaches elementary dislocation theory from its most basic level, the material contained in the volume is as up-to-date as when it was first published. The text addresses many aspects of dislocation theory, including the nature of dislocations, Burgers vectors, motion and its impact on dislocations, internal stresses of dislocations, and multiplication of dislocations. The topics of this text are fundamental to the theory of dislocation behavior. Because dislocation is now widely recognized as a key factor determining the behavior of crystalline solids, specialists in electronics materials, as well as fracture mechanics, and materials science and engineering should have a solid grounding in this field. A large number of problems is provided in the text. |