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Properties of Impurity States in Superlattice Semiconductors 1988 Edition
Contributor(s): Fong, C. y. (Editor), Batra, Inder P. (Editor), Ciraci, S. (Editor)
ISBN: 0306430096     ISBN-13: 9780306430091
Publisher: Springer
OUR PRICE:   $94.05  
Product Type: Hardcover - Other Formats
Published: January 1989
Qty:
Temporarily out of stock - Will ship within 2 to 5 weeks
Additional Information
BISAC Categories:
- Science | Physics - Condensed Matter
- Gardening
Dewey: 530.41
LCCN: 88-25348
Series: NATO Science Series B:
Physical Information: 351 pages
 
Descriptions, Reviews, Etc.
Publisher Description:
A NATO workshop on "The Properties of Impurity States in Semiconductor Superlattices" was held at the University of Essex, Colchester, United Kingdom, from September 7 to 11, 1987. Doped semiconductor superlattices not only provide a unique opportunity for studying low dimensional electronic behavior, they can also be custom-designed to exhibit many other fascinating el ctronic properties. The possibility of using these materials for new and novel devices has further induced many astonishing advances, especially in recent years. The purpose of this workshop was to review both advances in the state of the art and recent results in various areas of semiconductor superlattice research, including: (i) growth and characterization techniques, (ii) deep and shallow im- purity states, (iii) quantum well states, and (iv) two-dimensional conduction and other novel electronic properties. This volume consists of all the papers presented at the workshop. Chapters 1-6 are concerned with growth and characterization techniques for superlattice semiconductors. The question of a-layer is also discussed in this section. Chapters 7-15 contain a discussion of various aspects of the impurity states. Chapters 16- 22 are devoted to quantum well states. Finally, two-dimensional conduction and other electronic properties are described in chapters 23-26.