| Tradeoffs and Optimization in Analog CMOS Design Contributor(s): Binkley, David (Author) |
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ISBN: 0470031360 ISBN-13: 9780470031360 Publisher: Wiley-Interscience OUR PRICE: $155.75 Product Type: Hardcover - Other Formats Published: May 2008 |
| Additional Information |
| BISAC Categories: - Technology & Engineering | Electronics - Circuits - Integrated - Technology & Engineering | Electronics - Semiconductors |
| Dewey: 621.381 |
| LCCN: 2007037318 |
| Physical Information: 1.6" H x 6.9" W x 9.8" (2.85 lbs) 632 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: This book presents methods for the optimized design of analog CMOS circuits through the design choices of Metal-Oxide Semiconductor Field-Effect Transistor device drain current, inversion level, and channel length. This text starts with a full introduction to why a book on this subject is needed, before giving an overview of circuit design in all regions of Metal Oxide Semiconductor operation, emphasizing the importance of methods that freely permit design in all regions of MOS. Two appendices contain CMOS test devices used to validate methods contained in the book, and an analog MOS design optimization spreadsheet describing user inputs, mapping of device operation, and equations. |