| Photo-Induced Defects in Semiconductors Contributor(s): Redfield, David (Author), Bube, Richard H. (Author) |
|
 |
ISBN: 0521461960 ISBN-13: 9780521461962 Publisher: Cambridge University Press OUR PRICE: $105.45 Product Type: Hardcover - Other Formats Published: January 1996 Annotation: Photoinduced Defects in Semiconductors is the first book to give a complete overview of the properties of deep-level, localized defects in semiconductors that can be created or destroyed by light. |
| Additional Information |
| BISAC Categories: - Science | Physics - Condensed Matter - Technology & Engineering | Materials Science - General - Technology & Engineering | Electronics - Semiconductors |
| Dewey: 621.381 |
| LCCN: 95032567 |
| Series: Cambridge Studies in Semiconductor Physics & Microelectronic Engineering |
| Physical Information: 0.81" H x 6.23" W x 9.28" (1.06 lbs) 230 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: This book gives a complete overview of the properties of deep-level, localized defects in semiconductors. Such comparatively long-lived (or metastable) defects exhibit complex interactions with the surrounding material, and can significantly affect the performance and stability of certain semiconductor devices. After an introductory discussion of metastable defects, the authors present properties of DX and EL2 centers in IIISHV compounds. They also deal with additional crystalline materials before giving a detailed description of the properties and kinetics of photo-induced defects in amorphous semiconductors. The book closes with an examination of the effects of photo-induced defects in a range of practical applications. The book will be of great use to graduate students and researchers interested in the physics and materials science of semiconductors. |
