| Defect Recognition and Image Processing in Semiconductors 1997: Proceedings of the seventh conference on Defect Recognition and Image Processing, Berl 1997 Edition Contributor(s): Doneker, J. (Author), Rechenberg, I. (Author) |
|
 |
ISBN: 0750305002 ISBN-13: 9780750305006 Publisher: CRC Press OUR PRICE: $522.50 Product Type: Hardcover Published: January 1998 Annotation: This book provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. It addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. This volume also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. |
| Additional Information |
| BISAC Categories: - Science | Physics - Condensed Matter - Technology & Engineering | Electronics - General - Technology & Engineering | Imaging Systems |
| Dewey: 621.381 |
| LCCN: 97049019 |
| Series: Institute of Physics Conference |
| Physical Information: 1.19" H x 6.14" W x 9.21" (2.07 lbs) 524 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide. |
