| Wide Band Gap Electronic Materials 1995 Edition Contributor(s): Prelas, Mark A. (Editor), Gielisse, Peter (Editor), Popovici, Galina (Editor) |
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ISBN: 0792334051 ISBN-13: 9780792334057 Publisher: Springer OUR PRICE: $360.99 Product Type: Hardcover - Other Formats Published: May 1995 Annotation: Wide Band Gap Electronic Materials covers topics including electronic doping of diamond, n-type diamond, negative electron affinity of diamond, applications of aluminum nitride, the doping of boron nitride, wide band gap electronic applications, and nanophase diamond. One of the highlights is the description of an energy sub-band due to defects in the diamond lattice, responsible for a diamond LED which can emit red, green and blue light. Revolutionary nanostructure devices are also described, such as nanostructure transistors. It is also shown how aluminum nitride can be used in acoustic, piezo and electroluminescent devices. Nanophase diamond particles having a narrow size distribution around 4 nm can be created by an explosive shock wave, and these can be used as seeds for growing smooth diamond films, as additives in composite materials, for nanophase electronic devices, and as the basis for superior lubricants. Other problems covered include the heteroepitaxy of diamond films, doping of aluminum nitride, and the growth of large crystals of boron nitride. |
| Additional Information |
| BISAC Categories: - Technology & Engineering | Electronics - Circuits - General - Technology & Engineering | Materials Science - Electronic Materials - Science | Chemistry - Physical & Theoretical |
| Dewey: 541 |
| LCCN: 95007367 |
| Series: NATO Asi Series |
| Physical Information: 1.19" H x 6.14" W x 9.21" (2.08 lbs) 531 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: Minsk, Belarus was the site of the NATO ARW on Wide Band-Gap electronic Materials May 3 through 6,1994; 143 participants and observers from 15 countries met for the NATO Advanced Research Workshop on Wide Band-Gap Electronic Materials (NATO ARW). The meeting was marked by a remarkable free exchange between east and west on these topics by revealing technical achievements not widely known or available in the west because ofpast political climate or present economic realities in the Newly IndependentStates. The topics ranged from electron doping of diamond, n-type diamond, negative electron affinity ofdiamond, applications of aluminum nitride, doping ofboron nitride, wideband gap electronic applications, to nanophase diamond. Of the many high-lights during the scientific meetings, an energy sub band due to defects in the diamond lattice was described. These defects areresponsible for the light emission from a diamond Light Emitting Diode (LED) which was demonstrated at the NATO ARW. This diamond LED can emitred, green, and blue light. The potential for "high tech" nanostructure electronic devices such as quantum transistors was described which mightsome day revolutionize electronics. The prospectsofaluminum nitride for acusto devices, piezodevices, and electroluminescencedevices were discussed. |