| Dopants and Defects in Semiconductors Contributor(s): McCluskey, Matthew D. (Author), Haller, Eugene E. (Author) |
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ISBN: 113803519X ISBN-13: 9781138035195 Publisher: CRC Press OUR PRICE: $228.00 Product Type: Hardcover - Other Formats Published: February 2018 |
| Additional Information |
| BISAC Categories: - Science | Physics - Condensed Matter - Technology & Engineering | Materials Science - General - Technology & Engineering | Chemical & Biochemical |
| Dewey: 660.297 |
| LCCN: 2017042997 |
| Physical Information: 372 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: Praise for the First Edition The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field ... well written, with clear, lucid explanations ... This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland. |
