| Channel Temperature Model for Microwave Algan/Gan Hemts on Sic and Sapphire Mmics in High Power, High Efficiency Sspas Contributor(s): Nasa Technical Reports Server (Ntrs) (Created by), Freeman, Jon C. (Author) |
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ISBN: 1287269087 ISBN-13: 9781287269083 Publisher: Bibliogov OUR PRICE: $14.01 Product Type: Paperback Published: July 2013 |
| Additional Information |
| BISAC Categories: - Political Science |
| Physical Information: 0.05" H x 7.44" W x 9.69" (0.14 lbs) 24 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: A key parameter in the design trade-offs made during AlGaN/GaN HEMTs development for microwave power amplifiers is the channel temperature. An accurate determination can, in general, only be found using detailed software; however, a quick estimate is always helpful, as it speeds up the design cycle. This paper gives a simple technique to estimate the channel temperature of a generic microwave AlGaN/GaN HEMT on SiC or Sapphire, while incorporating the temperature dependence of the thermal conductivity. The procedure is validated by comparing its predictions with the experimentally measured temperatures in microwave devices presented in three recently published articles. The model predicts the temperature to within 5 to 10 percent of the true average channel temperature. The calculation strategy is extended to determine device temperature in power combining MMICs for solid-state power amplifiers (SSPAs). |