| Zinc Oxide - A Material for Micro- And Optoelectronic Applications: Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for 2005 Edition Contributor(s): Nickel, Norbert H. (Editor), Terukov, Evgenii (Editor) |
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ISBN: 1402034741 ISBN-13: 9781402034749 Publisher: Springer OUR PRICE: $161.49 Product Type: Paperback - Other Formats Published: August 2005 |
| Additional Information |
| BISAC Categories: - Science | Physics - Optics & Light - Technology & Engineering | Optics - Technology & Engineering | Materials Science - General |
| Dewey: 620.184 |
| Series: NATO Science Series II: |
| Physical Information: 0.55" H x 6.14" W x 9.21" (0.81 lbs) 240 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on "Zinc oxide as a material for micro- and optoelectronic applications", held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV. |