| Defects in High-K Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices 2006 Edition Contributor(s): Gusev, Evgeni (Editor) |
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ISBN: 140204366X ISBN-13: 9781402043666 Publisher: Springer OUR PRICE: $208.99 Product Type: Paperback - Other Formats Published: January 2006 Annotation: The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology. |
| Additional Information |
| BISAC Categories: - Technology & Engineering | Electrical - Technology & Engineering | Materials Science - General - Technology & Engineering | Electronics - Microelectronics |
| Dewey: 621.395 |
| Series: NATO Science Series II: Mathematics, Physics and Chemistry |
| Physical Information: 1.02" H x 6.14" W x 9.21" (1.55 lbs) 492 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: The goal of this NATO Advanced Research Workshop (ARW) entitled "Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices", which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market. |