| Nanoscaled Semiconductor-On-Insulator Structures and Devices 2007 Edition Contributor(s): Hall, S. (Editor), Nazarov, A. N. (Editor), Lysenko, V. S. (Editor) |
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ISBN: 1402063792 ISBN-13: 9781402063794 Publisher: Springer OUR PRICE: $208.99 Product Type: Paperback - Other Formats Published: July 2007 Annotation: The book details many of the key issues associated with the scaling to nano-dimensions of silicon-on-insulator structures. Some papers offer new insight particularly at the device/circuit interface as appropriate for SOI which is fast becoming a mainstream technology. One of the key issues concerns mobility degradation in SOI films less than about 5nm. The advantages of combining scaled SOI devices with high permittivity (k) dielectric indicates that potential solutions are indeed available down to the 22nm node even with 5nm SOI films. A further key issue and potential ???show stopper??? for SOI CMOS is highlighted in a number of invited and contributed papers addressing atomistic level effects. Results are presented for Monte Carlo and drift/diffusion modelling together with device compact models and circuit level simulation and this provided for a broad exposure of the problems from intrinsic physics to the circuit level. The scaling to nano-dimensions takes the technology into the realms of quantum effects and a number of papers addressed this aspect from both the technological and physics aspects. The scope of potential applications for quantum dots, quantum wires and nanotubes are considered. The use of semiconductor materials other than Si, on insulator, is featured in some sections of the book. The potential of III/V, Ge and other materials to facilitate continuation down the roadmap is illustrated by a review of the state-of-the-art. |
| Additional Information |
| BISAC Categories: - Technology & Engineering | Optics - Technology & Engineering | Nanotechnology & Mems - Technology & Engineering | Electrical |
| Dewey: 621.381 |
| Series: NATO Science for Peace and Security Series B: Physics and Bi |
| Physical Information: 0.79" H x 6.14" W x 9.21" (1.18 lbs) 369 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: This proceedings volume constitutes an archive of the contributions of the key-speakers who attended the NATO Advanced Research Workshop on "Nanoscaled Semiconductor-On-Insulator Structures and devices" held in the Tourist and Recreation Centre "Sudak" (Crimea, Ukraine) from 15 to 19 October 2006. The semiconductor industry has sustained a very rapid growth during the last three decades through impressive technological developments which have resulted in products with higher performance and lower cost per function. After many years of development it is now confidently predicted that semiconductor-on-insulator materials will enter and increasingly be used by manufacturing industry. The wider use of semiconductor (es- cially silicon) on insulator materials will not only enable the benefits of these materials to be demonstrated but, also, will drive down the cost of substrates which, in turn, will stimulate the development of other novel devices and applications. Thus the semiconductor-on-insulator materials of today are not only the basis for modern microelectronics but also for future nanoscale devices and ICs. In itself this trend will encourage the promotion of the skills and ideas generated by researchers in the Former Soviet Union and Eastern Europe. Indeed, one of the goals of this Workshop is to promote the development of SOI technologies worldwide. |