| Planar Double-Gate Transistor: From Technology to Circuit 2009 Edition Contributor(s): Amara, Amara (Editor), Rozeau, Olivier (Editor) |
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ISBN: 1402093276 ISBN-13: 9781402093272 Publisher: Springer OUR PRICE: $161.49 Product Type: Hardcover - Other Formats Published: January 2009 Annotation: This book on Double-Gates devices and circuit is unique and aims to reinforce the synergy between the research activities on CMOS sub-32nm devices and the design of elementary circuits. The goal is to point out how we can take advantage of new transistor structures to come up with new basic cells and concepts that exploit the electrical features of these new devices and the breakthrough they bring. Planar Double-Gate Transistor will mainly focus on SOI CMOS transistors, fully depleted with double independent planar Gates (Independent Planar Double Gates Transistors: IPDGT), a potential candidate for the sub-32 nm technological nodes planned for production in 2013 in the current ITRS Roadmap. |
| Additional Information |
| BISAC Categories: - Technology & Engineering | Optics - Technology & Engineering | Electronics - Circuits - General - Science | Physics - Condensed Matter |
| Dewey: 530.41 |
| LCCN: 2008939918 |
| Physical Information: 0.56" H x 6.14" W x 9.21" (1.08 lbs) 211 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called "scaling", has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore's Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore's law and each dif?culty has found a solution. |