| III-Nitride Semiconductors: Growth Contributor(s): Manasreh, Omar (Author) |
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ISBN: 1560329955 ISBN-13: 9781560329954 Publisher: CRC Press OUR PRICE: $403.75 Product Type: Hardcover Published: November 2002 Annotation: This volume is focused on the growth techniques for III-Nitrides featuring chapters written by leading experts in the field. This unique volume provides a comprehensive review and introduction to growth issues, substrates and characterization of GaN and related compounds for newcomers to the field and stimulus for further advances for experienced researchers. The technical chapters in this volume are focused on various aspects of growth modes, growth techniques such as molecular beam epitaxy, metalorganic chemical vapor deposition, metalorganic vapor phase epitaxy, epitaxial lateral overgrowth, hydride vapor phase epitaxial growth, as well as substrate issues and characterization results. |
| Additional Information |
| BISAC Categories: - Technology & Engineering | Materials Science - General - Medical - Technology & Engineering | Electrical |
| Dewey: 621.381 |
| LCCN: 2002066204 |
| Series: Optoelectronic Properties of Semiconductors and Superlattice |
| Physical Information: 1.66" H x 6.8" W x 8.68" (2.33 lbs) 684 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: This volume is focused on the growth techniques for III-Nitrides featuring chapters written by leading experts in the field. This unique volume provides a comprehensive review and introduction to growth issues, substrates and characterization of GaN and related compounds for newcomers to the field and stimulus for further advances for experienced researchers. The technical chapters in this volume are focused on various aspects of growth modes, growth techniques such as molecular beam epitaxy, metalorganic chemical vapor deposition, metalorganic vapor phase epitaxy, epitaxial lateral overgrowth, hydride vapor phase epitaxial growth, as well as substrate issues and characterization results. |
