| Silicon-Germanium Heterojunction Bipolar Transistors Contributor(s): Cressler, John D. (Author) |
|
 |
ISBN: 1580533612 ISBN-13: 9781580533614 Publisher: Artech House Publishers OUR PRICE: $141.55 Product Type: Hardcover - Other Formats Published: January 2003 |
| Additional Information |
| BISAC Categories: - Technology & Engineering | Electronics - Transistors - Technology & Engineering | Electrical |
| Dewey: 621.381 |
| LCCN: 2002038276 |
| Physical Information: 1.61" H x 6.28" W x 9.32" (2.29 lbs) 588 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: This resource provides engineers with a comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBT), a semi-conductor technology that is expected to revolutionise the communications industry by offering low-cost, high-speed solutions for emerging communications needs. It offers practitioners and students a from-the-ground-up understanding of SiGe HBT devices and technology from a very broad perspective. The text covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with SiGe. This reference explains how to design, simulate, fabricate and measure a SiGe HBT, and offers an understanding of the optimization issues and design tradeoffs of SiGe HBTs and RF/microwave circuits built with this new technology. |