| Silicon Carbide: Materials, Processing and Devices Contributor(s): Zhe, Chuan Feng (Author) |
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ISBN: 1591690234 ISBN-13: 9781591690238 Publisher: CRC Press OUR PRICE: $114.00 Product Type: Hardcover - Other Formats Published: October 2003 |
| Additional Information |
| BISAC Categories: - Technology & Engineering | Chemical & Biochemical - Technology & Engineering | Materials Science - General |
| Dewey: 621.381 |
| LCCN: 2003019997 |
| Physical Information: 0.88" H x 6" W x 9" (1.55 lbs) 416 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: The past two decades have brought forth major advances in the research of Silicon Carbide (SiC) materials, devices, and applications. This book explores the history and latest developments in the SiC field, with an emphasis on the properties and applications of SiC to electronics and optoelectronics. Silicon carbide (SiC) is an excellent semiconductor for electronic and optoelectronic applications for high-temperature, high-power, high-frequency, and radiation hard environments. The eight chapters of this book are written by a selection of international experts who review the major areas of research in the field, discuss the most recent advancements, and highlight areas where progress remains to be made. The book presents the key properties of 3C-, 6H- and 4H-SiC polytypes, including structural, electrical, optical, surface and interface, and addresses the challenging issues confronted by future researchers in the areas of material growth and device fabrication. An up-to-date reference suitable for graduate students, engineers, and scientists in the SiC field, this book also provides useful information to material growers and evaluators, as well as device design and processing engineers, and potential users of SiC technologies. |
