| Epitaxy of Nanostructures 2004 Edition Contributor(s): Shchukin, Vitaly (Author), Ledentsov, Nikolai N. (Author), Bimberg, Dieter (Author) |
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ISBN: 3540678174 ISBN-13: 9783540678175 Publisher: Springer OUR PRICE: $208.99 Product Type: Hardcover - Other Formats Published: October 2003 Annotation: The main focus of the book are the physical mechanisms behind the spontaneous formation of ordered nanostructures at semiconductor surfaces. These mechanisms are at the root of recent breakthroughs in advanced nanotechnology of quantum-wire and quantum-dot fabrication. Generic theoretical models are presented addressing formation of all basic types of nanostructures, including periodically faceted surfaces, arrays of step-bunches of equal heights and single- and multi-sheet arrays of both 2- and 3-D strained islands. Decisive experiments on both structural and optical characterization of nanostructures are discussed to verify theoretical models and link them to practical examples. The book also describes experimental tools in nanoengineering that enable one to intentionally control the parameters of self-organized nanostructures, such as chemical composition, shape, size, density and relative arrangement of quantum dots and wires. Practical applications of nanoepitaxial technologies are discussed in the framework of recent advances in quantum dot lasers. |
| Additional Information |
| BISAC Categories: - Science | Nanoscience - Science | Physics - Condensed Matter - Science | Physics - Electricity |
| Dewey: 620.5 |
| LCCN: 2003054394 |
| Series: Nanoscience and Technology |
| Physical Information: 1.07" H x 6.48" W x 9.4" (1.90 lbs) 388 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: The general trend in modern solid state physics and technology is to make things smaller. The size of key elements in modern devices approaches the nanometer scale, for both vertical and lateral dimensions. Ultrathin layers, or quantum wells, had already gained broad acceptance for applications in micro- and optoelectronics by the 1980s. However, the development of het- erostructures with lower dimensionality (quantum wires, where carriers are confined in two directions and move freely in one, and quantum dots, where carriers are confined in all three directions) took longer. It became clear that quantum wire and dot structures constitute the utmost technological chal- lenge, whilst providing enormous advantages. At the beginning of the 1990s, a few outstanding discoveries concern- ing self-organization phenomena at crystal surfaces for direct fabrication of nanostructures led to a change in the major paradigms of semiconductor physics and technology. This new approach in epitaxy enables fast parallel fabrication of large densities of quantum dots or wires for almost unlimited material combinations and has become the basis for a powerful new branch of nanotechnology. Quantum dots, coherent inclusions in a semiconductor ma- trix with zero-dimensional electronic properties persistent up to room tem- perature, have demonstrated fascinating physical properties and given birth to a novel generation of optoelectronic devices and systems. |