| Einstein Relation in Compound Semiconductors and Their Nanostructures 2009 Edition Contributor(s): Ghatak, Kamakhya Prasad (Author), Bhattacharya, Sitangshu (Author), de, Debashis (Author) |
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ISBN: 3540795561 ISBN-13: 9783540795568 Publisher: Springer OUR PRICE: $161.49 Product Type: Hardcover - Other Formats Published: November 2008 Annotation: This is the first book solely devoted to the Einstein relation in compound semiconductors and their nanostructures. The materials considered are nonlinear optical, III-V, ternary, quaternary, II-VI, IV-VI, Bismuth, stressed compounds, quantum wells, quantum wires, nipi structures, carbon nanotubes, heavily doped semiconductors, inversion layers, superlattices of nonparabolic materials with graded interfaces under magnetic quantization, quantum wire superlattices with different band structures and other field assisted systems. The influence of light on the Einstein relation in semiconductors and their nanostructures has also been investigated in detail by formulating the respective dispersion relations which control the transport in such quantum effect devices. The book deals with many open research problems. |
| Additional Information |
| BISAC Categories: - Technology & Engineering | Materials Science - General - Technology & Engineering | Nanotechnology & Mems - Science | Physics - Optics & Light |
| Dewey: 530.41 |
| Series: Springer Series in Materials Science |
| Physical Information: 0.9" H x 6.3" W x 9.4" (1.70 lbs) 458 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: In recent years, with the advent of ?ne line lithographical methods, molecular beam epitaxy, organometallic vapour phase epitaxy and other experimental techniques, low dimensional structures having quantum con?nement in one, two and three dimensions (such as inversion layers, ultrathin ?lms, nipi's, quantum well superlattices, quantum wires, quantum wire superlattices, and quantum dots together with quantum con?ned structures aided by various other ?elds) have attracted much attention, not only for their potential in uncovering new phenomena in nanoscience, but also for their interesting applications in the realm of quantum e?ect devices. In ultrathin ?lms, due to the reduction of symmetry in the wave-vector space, the motion of the carriers in the direction normal to the ?lm becomes quantized leading to the quantum size e?ect. Such systems ?nd extensive applications in quantum well lasers, ?eld e?ect transistors, high speed digital networks and also in other low dimensional systems. In quantum wires, the carriers are quantized in two transverse directions and only one-dimensional motion of the carriers is allowed. The transport properties of charge carriers in quantum wires, which may be studied by utilizing the similarities with optical and microwave waveguides, are currently being investigated. Knowledge regarding these quantized structures may be gained from original research contributions in scienti?c journals, proceedings of international conferences and various - view articles. |