| Technology of Gallium Nitride Crystal Growth Contributor(s): Ehrentraut, Dirk (Editor), Meissner, Elke (Editor), Bockowski, Michal (Editor) |
|
 |
ISBN: 3642263895 ISBN-13: 9783642263897 Publisher: Springer OUR PRICE: $208.99 Product Type: Paperback - Other Formats Published: September 2012 |
| Additional Information |
| BISAC Categories: - Science | Physics - Crystallography - Technology & Engineering | Materials Science - Electronic Materials - Technology & Engineering | Optics |
| Dewey: 530 |
| Series: Springer Series in Materials Science |
| Physical Information: 0.7" H x 6" W x 9" (1.00 lbs) 326 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: Semiconductor materials have been studied intensively since the birth of silicon technology more than 50 years ago. The ability to physically and chemically t- lor their properties with precision is the key factor responsible for the electronic revolution in our society over the past few decades. Semiconductor material s- tems (like silicon and GaAs-related materials) have now matured and found well established applications in electronics, optoelectronics, and several other ?elds. Other materials such as III-Nitrides were developed later, in response to needs that the above mentioned semiconductors were unable to ful?ll. The properties of I- nitrides (AlN, GaN InN, and related alloy systems) make them an excellent choice for ef?cient light emitters in the visible as well as the UV region, UV detectors, and for a variety of electronic device such as high frequency unipolar power devices. There was a major upsurgein the research of the GaN material system around1970. |