| Amorphous and Crystalline Silicon Carbide and Related Materials: Proceedings of the First International Conference, Washington DC, December 10 and 11, Softcover Repri Edition Contributor(s): Harris, Gary L. (Editor), Yang, Cary Y. -W (Editor) |
|
 |
ISBN: 3642934080 ISBN-13: 9783642934087 Publisher: Springer OUR PRICE: $104.49 Product Type: Paperback - Other Formats Published: January 2012 |
| Additional Information |
| BISAC Categories: - Science | Physics - Crystallography - Technology & Engineering | Electronics - Microelectronics - Technology & Engineering | Electronics - Semiconductors |
| Dewey: 621.381 |
| Series: Springer Proceedings in Physics (Paperback) |
| Physical Information: 0.46" H x 6.69" W x 9.61" (0.77 lbs) 199 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications. |