| Ionizing Radiation Effects in Mos Oxides Contributor(s): Oldham, Timothy R. (Editor) |
|
 |
ISBN: 9810233264 ISBN-13: 9789810233266 Publisher: World Scientific Publishing Company OUR PRICE: $74.10 Product Type: Hardcover Published: January 2000 Annotation: This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was Ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic physical mechanisms has evolved. This book summarizes the new work and integrates it with older work to form a coherent, unified picture. It is aimed primarily at specialists working on radiation effects and oxide reliability. |
| Additional Information |
| BISAC Categories: - Technology & Engineering | Electronics - Semiconductors - Technology & Engineering | Electronics - Solid State - Science | Physics - General |
| Dewey: 621.381 |
| Series: International Advances in Solid State Electronics and Technology |
| Physical Information: 0.6" H x 6.1" W x 8.8" (0.85 lbs) 188 pages |