| Research on the Radiation Effects and Compact Model of Sige Hbt Softcover Repri Edition Contributor(s): Sun, Yabin (Author) |
|
 |
ISBN: 9811351813 ISBN-13: 9789811351815 Publisher: Springer OUR PRICE: $104.49 Product Type: Paperback - Other Formats Published: January 2019 |
| Additional Information |
| BISAC Categories: - Technology & Engineering | Electronics - Semiconductors - Technology & Engineering | Materials Science - Electronic Materials - Science | Physics - Condensed Matter |
| Dewey: 530.41 |
| Series: Springer Theses |
| Physical Information: 0.41" H x 6.14" W x 9.21" (0.61 lbs) 168 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique. |
