| Mosfet Modeling for VLSI Simulation: Theory and Practice Contributor(s): Arora, Narain (Editor) |
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ISBN: 981256862X ISBN-13: 9789812568625 Publisher: World Scientific Publishing Company OUR PRICE: $216.60 Product Type: Hardcover - Other Formats Published: March 2007 Annotation: A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. |
| Additional Information |
| BISAC Categories: - Technology & Engineering | Electrical - Technology & Engineering | Electronics - Circuits - Vlsi & Ulsi - Technology & Engineering | Electronics - Semiconductors |
| LCCN: 2007278691 |
| Series: International Series on Advances in Solid State Electronics and Technology (Unnumbered) |
| Physical Information: 1.25" H x 6.36" W x 9" (2.48 lbs) 632 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations.The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs. |