| Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices Contributor(s): Schroeder, Uwe (Editor), Hwang, Cheol Seong (Editor), Funakubo, Hiroshi (Editor) |
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ISBN: 0081024304 ISBN-13: 9780081024300 Publisher: Woodhead Publishing OUR PRICE: $212.85 Product Type: Paperback Published: March 2019 |
| Additional Information |
| BISAC Categories: - Technology & Engineering | Electronics - Digital - Technology & Engineering | Electronics - Microelectronics - Technology & Engineering | Materials Science - General |
| LCCN: 2019393969 |
| Series: Woodhead Publishing Electronic and Optical Materials |
| Physical Information: 1.16" H x 6" W x 9" (1.66 lbs) 570 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. |