| Electrical and Thermal Characterization of MESFETs, HEMTs and HBTs Contributor(s): Anholt, Robert (Author) |
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ISBN: 089006749X ISBN-13: 9780890067499 Publisher: Artech House Publishers OUR PRICE: $169.10 Product Type: Hardcover Published: November 1994 Annotation: Learn why III-V transistor device electrical characteristics change with temperature, and develop models of the temperature change for use in integrated circuit design programs. You'll find never-before presented experimental S-equivalent-circuit parameter data on a wide variety of devices, and learn how to measure S-parameters and fit equivalent circuits. |
| Additional Information |
| BISAC Categories: - Technology & Engineering | Electronics - Solid State - Technology & Engineering | Electrical |
| Dewey: 621.381 |
| LCCN: 94036803 |
| Series: Artech House Microwave Library (Hardcover) |
| Physical Information: 0.87" H x 6.3" W x 9.33" (1.33 lbs) 324 pages |
| Descriptions, Reviews, Etc. |
| Publisher Description: This work provides a comprehensive discussion of the bias dependence of equivalent circuit parameters for the three devices and an extensive discussion of temperature dependence. It: covers recess-etched MESFETs and self-aligned MESFETs with and without lightly-doped-drains and JFETs; analyzes GaAs-based pHEMTS and InP lattice-matched HEMT equivalent circuits; and describes a large-signal, temperature-dependent model extractor for A1GaAs-GaAs HBTs. The book is intended for circuit designers, process and device developers and test engineers. |